From Fully Strained to Relaxed: Epitaxial Ferroelectric Al <sub>1?</sub> <i> <sub>x</sub> </i> Sc <i> <sub>x</sub> </i> N for III?N Technology
نویسندگان
چکیده
The recent emergence of wurtzite-type nitride ferroelectrics such as Al1-xScxN has paved the way for introduction all-epitaxial, all-wurtzite-type ferroelectric III-N semiconductor heterostructures. This paper presents first in-depth structural and electrical characterization an epitaxial heterostructure by investigating sputter deposited solid solutions with x between 0.19 0.28 grown over doped n-GaN. results detailed investigations on strain state initial unit-cell polarity peculiarities observed in response are correlated. Among these, a Sc-content dependent splitting displacement current into separate peaks, which can be correlated presence multiple states films is discussed. Unlike previously reported studies Al1-xScxN, all thicker than 30 nm metal (M)-polar GaN template feature multidomain state. support that regions opposed polarities as-grown do not result direct consequence in-plane distribution, but rather mediated competition M-polar growth deposition process favors nitrogen (N)-polar growth.
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ژورنال
عنوان ژورنال: Advanced Functional Materials
سال: 2022
ISSN: ['1616-301X', '1616-3028']
DOI: https://doi.org/10.1002/adfm.202109632